SiC MOSFET
High-speed switching is possible. In particular, ON resistance is low even at high temperatures, minimizing switching and conduction losses.
The lineup is currently being expanded, optimized for next-generation devices.
18VDrive
Package |
VDSS(V) |
1200 |
ID(A) |
|
Number
of
terminal |
TO-247
 |
35 |
*SCH2080KE(N)
*SCT2080KE(N) |
3
3 |
Part number with * are under development.
(N) means Nch, and (P) means Pch. |