商品明細

3430-SW

料號：3430-SW

商品詳細介紹Product Introduction

3430-SW

Specifications
	Switching Time Test	I-Short Test	trr Test
VCE	30 ～ 1,500 V ( 1V Step)	30 ～ 1,500V (1V Step)	30 ～ 1,500V (1V Step)
IC	1 ～ 300 A(1A Step)	1 ～ 1,000A (1A Step)	1 ～ 300A (1A Step)
IC Trip	1 ～ 300 A(1A Step)	－	1 ～ 300A (1A Step)
IC max	1 ～ 1,000A(1A Step)	1 ～ 1,000A (1A Step)	1 ～ 1,000A (1A Step)
VGE	±30.0V (0.1V Step)	±30.0V (0.1V Step)	±30.0V (0.1V Step)
RG	1 ～ 250Ω(1Ω Step)	1 ～ 250Ω (1Ω Step)	1 ～ 250Ω (1Ω Step)
Pulse	Single /Double	Single	Double
T1	000.1μ ～ 50.0 ms(0.1μs Step)	000.1 ～ 50.0μs (0.1μs Step)	000.1μ ～ 50.0 ms (0.1μs Step)
T2	000.1 ～ 999.9μs(0.1μs Step)	－	000.1 ～ 999.9μs (0.1μs Step)
T3	000.1 ～ 999.9μs(0.1μs Step)	－	000.1 ～ 999.9μs (0.1μs Step)
R Load	Plug in	－	－
l Load	Plug in	－	Plug in
Pre check	GS Short /Open /Short /Leak	GS Short /Open /Short /Leak	Vdsf(D.U.T) /GS Short /Open /Short /Leak (Dummy)
Post check	Leak	Leak	Leak (Dummy)
Test Item	td(on) /td(off) /ton /toff /tr /tf /Eon /Eoff /IC0	Icp	trr /trr1 /trr2 /Irr /Qrr /Qrr1 /Qrr2 /IF /dIF /dt /dI(rec)M /dt
Test Time	160 ms	140 ms	170 ms
DSO	LT364 (LeCroy)	－	LT364 (LeCroy)

Dynamic Test System 3430-SW measures dynamic characteristics of IGBT/MOSFET devices at high speed. Maximum of 4 parallel measurement is available by connecting the 3430-SW mainframe to four 3432-HB test heads and a total of four 3433-HB or 3434-HB or 3435-HB test stations. One PC controls the whole system.

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